SIHB22N60E-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIHB22N60E-GE3
- Description MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 57 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.050717 oz |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 21 A |
| Rds On - Drain-Source Resistance | 180 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | E |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 227 W |
| Technology | Si |
Need pricing on SIHB22N60E-GE3?
Tell us your quantity and target price. We reply the same business day.