SIA517DJ-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIA517DJ-T1-GE3
- Description MOSFET 12V Vds 8V Vgs PowerPAK SC-70
- Category MOSFET
Specifications
| Package | PowerPAK-SC70-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Width | 2.05 mm |
| Qg - Gate Charge | 15 nC, 20 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | SIA517DJ-GE3 |
| Fall Time | 10 ns, 20 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.000988 oz |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET, PowerPAK |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 21 S, 11 S |
| Id - Continuous Drain Current | 4.5 A |
| Length | 2.05 mm |
| Rds On - Drain-Source Resistance | 29 mOhms, 61 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 22 ns, 30 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SIA |
| Height | 0.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 10 ns, 30 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 6.5 W |
| Rise Time | 10 ns, 25 ns |
| Technology | Si |
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