SIA445EDJT-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIA445EDJT-T1-GE3
- Description MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70
- Category MOSFET
Specifications
| Package | PowerPAK-SC70-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 2.05 mm |
| Qg - Gate Charge | 69 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Fall Time | 25 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 34 S |
| Id - Continuous Drain Current | 12 A |
| Length | 2.05 mm |
| Rds On - Drain-Source Resistance | 13.8 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SIA |
| Height | 0.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 25 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 19 W |
| Rise Time | 25 ns |
| Technology | Si |
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