SI8457DB-T1-E1
- Manufacturer Vishay / Siliconix
- Part Number SI8457DB-T1-E1
- Description MOSFET -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6
- Category MOSFET
Specifications
| Package | MicroFoot-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 900 mV |
| Qg - Gate Charge | 93 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 210 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 26 S |
| Id - Continuous Drain Current | 10.2 A |
| Rds On - Drain-Source Resistance | 15 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 300 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SI8 |
| Packaging | |
| Typical Turn-On Delay Time | 27 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.7 W |
| Rise Time | 60 ns |
| Technology | Si |
Need pricing on SI8457DB-T1-E1?
Tell us your quantity and target price. We reply the same business day.