SI7884BDP-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SI7884BDP-T1-GE3
- Description MOSFET 40V 58A 46W 7.5mohm @ 10V
- Category MOSFET
Specifications
| Package | PowerPAK-SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 5.15 mm |
| Qg - Gate Charge | 51 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | SI7884BDP-GE3 |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.017870 oz |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 55 S |
| Id - Continuous Drain Current | 58 A |
| Length | 6.15 mm |
| Rds On - Drain-Source Resistance | 7.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 32 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SI7 |
| Height | 1.04 mm |
| Packaging | |
| Typical Turn-On Delay Time | 14 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 46 W |
| Rise Time | 10 ns |
| Technology | Si |
Need pricing on SI7884BDP-T1-GE3?
Tell us your quantity and target price. We reply the same business day.