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SI7431DP-T1-GE3

  • Manufacturer Vishay / Siliconix
  • Part Number SI7431DP-T1-GE3
  • Description MOSFET -200V Vds 20V Vgs PowerPAK SO-8
  • Category MOSFET
Specifications
Package PowerPAK-SO-8
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 200 V
Transistor Polarity P-Channel
Vgs th - Gate-Source Threshold Voltage 4 V
Width 5.15 mm
Qg - Gate Charge 88 nC
Vgs - Gate-Source Voltage 20 V
Part # Aliases SI7431DP-GE3
Fall Time 66 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand Vishay / Siliconix
Unit Weight 0.017870 oz
Number of Channels 1 Channel
Tradename TrenchFET
Configuration Single
Maximum Operating Temperature + 150 C
Forward Transconductance - Min 17 S
Id - Continuous Drain Current 3.6 A
Length 6.15 mm
Rds On - Drain-Source Resistance 147 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 110 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series SI7
Height 1.04 mm
Packaging
Typical Turn-On Delay Time 23 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1.9 W
Rise Time 49 ns
Technology Si

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