SI6562CDQ-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SI6562CDQ-T1-GE3
- Description MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
- Category MOSFET
Specifications
| Package | TSSOP-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Qg - Gate Charge | 15 nC, 34 nC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Part # Aliases | SI6562CDQ-GE3 |
| Fall Time | 10 ns, 15 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.005573 oz |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 17 S, 22 S |
| Id - Continuous Drain Current | 6.7 A, 6.1 A |
| Rds On - Drain-Source Resistance | 22 mOhms, 30 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns, 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SI6 |
| Packaging | |
| Typical Turn-On Delay Time | 12 ns, 30 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.6 W, 1.7 W |
| Rise Time | 10 ns, 25 ns |
| Technology | Si |
Need pricing on SI6562CDQ-T1-GE3?
Tell us your quantity and target price. We reply the same business day.