SI5908DC-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SI5908DC-T1-GE3
- Description MOSFET 20V Vds 8V Vgs 1206-8 ChipFET
- Category MOSFET
Specifications
| Package | ChipFET-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 7.5 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | |
| Fall Time | 12 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 22 S |
| Id - Continuous Drain Current | 5.9 A |
| Rds On - Drain-Source Resistance | 40 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 30 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SI5 |
| Packaging | |
| Typical Turn-On Delay Time | 20 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.1 W |
| Rise Time | 36 ns |
| Technology | Si |
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