SI5517DU-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SI5517DU-T1-GE3
- Description MOSFET 20V Vds 8V Vgs PowerPAK ChipFET
- Category MOSFET
Specifications
| Package | PowerPAK-ChipFET-Dual-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 16 nC, 14 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | SI5517DU-GE3 |
| Fall Time | 10 ns, 55 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 22 S, 9 S |
| Id - Continuous Drain Current | 6 A |
| Rds On - Drain-Source Resistance | 39 mOhms, 72 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns, 40 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SI54 |
| Packaging | |
| Typical Turn-On Delay Time | 20 ns, 8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 8.3 W |
| Rise Time | 65 ns, 35 ns |
| Technology | Si |
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