SI4670DY-T1-E3
- Manufacturer Vishay / Siliconix
- Part Number SI4670DY-T1-E3
- Description MOSFET 25V Vds 16V Vgs SO-8
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 18 nC |
| Vgs - Gate-Source Voltage | 16 V |
| Part # Aliases | SI4670DY-E3 |
| Fall Time | 10 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.006596 oz |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 23 S |
| Id - Continuous Drain Current | 7 A |
| Rds On - Drain-Source Resistance | 23 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SI4 |
| Packaging | |
| Typical Turn-On Delay Time | 15 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.8 W |
| Rise Time | 50 ns |
| Technology | Si |
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