SI4410DYTRPBF
- Manufacturer Infineon Technologies
- Part Number SI4410DYTRPBF
- Description MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Width | 3.9 mm |
| Qg - Gate Charge | 30 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | SP001563088 |
| Type | HEXFET Power MOSFET |
| Fall Time | 44 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.019048 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 10 A |
| Length | 4.9 mm |
| Rds On - Drain-Source Resistance | 20 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 38 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 1.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.5 W |
| Rise Time | 7.7 ns |
| Technology | Si |
Need pricing on SI4410DYTRPBF?
Tell us your quantity and target price. We reply the same business day.