SI3460BDV-T1-E3
- Manufacturer Vishay / Siliconix
- Part Number SI3460BDV-T1-E3
- Description MOSFET 20V 8.0A 3.5W
- Category MOSFET
Specifications
| Package | TSOP-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 450 mV |
| Width | 1.65 mm |
| Qg - Gate Charge | 16 nC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Part # Aliases | SI3460BDV-E3 |
| Fall Time | 6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.000705 oz |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 22 S |
| Id - Continuous Drain Current | 8 A |
| Length | 3.05 mm |
| Rds On - Drain-Source Resistance | 27 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SI3 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3.5 W |
| Rise Time | 60 ns |
| Technology | Si |
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