SI2323CDS-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SI2323CDS-T1-GE3
- Description MOSFET -20V Vds 8V Vgs SOT-23
- Category MOSFET
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Width | 1.6 mm |
| Qg - Gate Charge | 16 nC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Part # Aliases | SI2323CDS-GE3 |
| Fall Time | 12 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.000282 oz |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 20 S |
| Id - Continuous Drain Current | 6 A |
| Length | 2.9 mm |
| Rds On - Drain-Source Resistance | 39 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SI2 |
| Height | 1.45 mm |
| Packaging | |
| Typical Turn-On Delay Time | 15 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.5 W |
| Rise Time | 23 ns |
| Technology | Si |
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