SH8M11TB1
- Manufacturer ROHM Semiconductor
- Part Number SH8M11TB1
- Description MOSFET Trans MOSFET N/P-CH 30V 3.5A
- Category MOSFET
Specifications
| Package | SOP-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 2.5 V |
| Qg - Gate Charge | 1.9 nC, 4.2 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 3 ns, 12 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Id - Continuous Drain Current | 3.5 A |
| Rds On - Drain-Source Resistance | 70 mOhms, 70 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 18 ns, 35 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 4 ns, 9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 8 ns, 18 ns |
| Technology | Si |
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