SCTWA50N120
- Manufacturer STMicroelectronics
- Part Number SCTWA50N120
- Description MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- Category MOSFET
Specifications
| Package | HiP-247-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Qg - Gate Charge | 122 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Number of Channels | 1 Channel |
| Tradename | HiP247芒?垄 |
| Configuration | Single |
| Maximum Operating Temperature | + 200 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 65 A |
| Rds On - Drain-Source Resistance | 52 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SCTWA50N120 |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 318 W |
| Technology | SiC |
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