SCT30N120H
- Manufacturer STMicroelectronics
- Part Number SCT30N120H
- Description MOSFET
- Category MOSFET
Specifications
| Package | HiP-247-3 |
| Min. Pack | 1,000 |
| Vds - Drain-Source Breakdown Voltage | 1200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Qg - Gate Charge | 105 nC |
| Vgs - Gate-Source Voltage | - 10 V to 25 V |
| Fall Time | 28 ns |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 200 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 45 A |
| Rds On - Drain-Source Resistance | 100 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SCT30N120H |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 19 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 270 W |
| Rise Time | 20 ns |
| Technology | SiC |
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