SCT3060ALGC11
- Manufacturer ROHM Semiconductor
- Part Number SCT3060ALGC11
- Description MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Qg - Gate Charge | 58 nC |
| Vgs - Gate-Source Voltage | - 4 V, 22 V |
| Part # Aliases | SCT3060AL |
| Fall Time | 21 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 4.9 S |
| Id - Continuous Drain Current | 39 A |
| Rds On - Drain-Source Resistance | 60 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 34 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SCT3x |
| Typical Turn-On Delay Time | 19 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 165 W |
| Rise Time | 37 ns |
| Technology | SiC |
Need pricing on SCT3060ALGC11?
Tell us your quantity and target price. We reply the same business day.