SCT2H12NYTB
- Manufacturer ROHM Semiconductor
- Part Number SCT2H12NYTB
- Description MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
- Category MOSFET
Specifications
| Package | TO-268-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1700 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Qg - Gate Charge | 14 nC |
| Vgs - Gate-Source Voltage | 22 V |
| Part # Aliases | SCT2H12NY |
| Fall Time | 74 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.141096 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 400 mS |
| Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 1.15 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 35 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SCT2x |
| Packaging | |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 44 W |
| Rise Time | 21 ns |
| Technology | SiC |
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