SCT10N120
- Manufacturer STMicroelectronics
- Part Number SCT10N120
- Description MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- Category MOSFET
Specifications
| Package | HiP-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Qg - Gate Charge | 22 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 17 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Number of Channels | 1 Channel |
| Tradename | HiP247芒?垄 |
| Configuration | Single |
| Maximum Operating Temperature | + 200 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 12 A |
| Rds On - Drain-Source Resistance | 500 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 14 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SCT10N120 |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 W |
| Rise Time | 12 ns |
| Technology | SiC |
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