SCH2080KEC
- Manufacturer ROHM Semiconductor
- Part Number SCH2080KEC
- Description MOSFET SiC N-Ch MOSFET w/ SBD 1200V
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1200 V |
| Transistor Polarity | N-Channel, SBD |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Qg - Gate Charge | 106 nC |
| Vgs - Gate-Source Voltage | - 6 V, 22 V |
| Part # Aliases | SCH2080KE |
| Fall Time | 28 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 3.7 S |
| Id - Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance | 80 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 70 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SCH2x |
| Typical Turn-On Delay Time | 37 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 262 W |
| Rise Time | 33 ns |
| Technology | SiC |
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