RUQ050N02TR
- Manufacturer ROHM Semiconductor
- Part Number RUQ050N02TR
- Description MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 5A
- Category MOSFET
Specifications
| Package | SOT-457T-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Width | 1.6 mm |
| Qg - Gate Charge | 12 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | RUQ050N02 |
| Fall Time | 100 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 6.5 S |
| Id - Continuous Drain Current | 5 A |
| Length | 2.9 mm |
| Rds On - Drain-Source Resistance | 22 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 70 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | RUQ050N02 |
| Height | 0.85 mm |
| Packaging | |
| Typical Turn-On Delay Time | 15 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.25 W |
| Rise Time | 25 ns |
| Technology | Si |
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