RSD150N06TL
- Manufacturer ROHM Semiconductor
- Part Number RSD150N06TL
- Description MOSFET N-Channel Mosfet 100V, 10A, 4V gate drive
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 18 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | RSD150N06 |
| Fall Time | 15 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 15 A |
| Rds On - Drain-Source Resistance | 28 mOhms |
| RoHS | Y |
| Configuration | Single |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Series | RSD150N06 |
| Packaging | |
| Typical Turn-On Delay Time | 10 ns |
| Pd - Power Dissipation | 20 W |
| Rise Time | 30 ns |
| Technology | Si |
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