RS1E300GNTB
- Manufacturer ROHM Semiconductor
- Part Number RS1E300GNTB
- Description MOSFET 4.5V Drive Nch MOSFET
- Category MOSFET
Specifications
| Package | HSOP-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 39.8 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | RS1E300GN |
| Fall Time | 27 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.002490 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 32 S |
| Id - Continuous Drain Current | 30 A |
| Rds On - Drain-Source Resistance | 2.2 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 70.5 ns |
| Subcategory | MOSFETs |
| Packaging | |
| Typical Turn-On Delay Time | 21 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3 W |
| Rise Time | 14.8 ns |
| Technology | Si |
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