RQ3E100GNTB
- Manufacturer ROHM Semiconductor
- Part Number RQ3E100GNTB
- Description MOSFET 4.5V Drive Nch MOSFET
- Category MOSFET
Specifications
| Package | HSMT-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 7.9 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | |
| Fall Time | 3.1 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current | 10 A |
| Rds On - Drain-Source Resistance | 11.7 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 22.4 ns |
| Subcategory | MOSFETs |
| Packaging | |
| Typical Turn-On Delay Time | 8.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 4.3 ns |
| Technology | Si |
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