RN2911,LF
- Manufacturer Toshiba
- Part Number RN2911,LF
- Description Bipolar Transistors - Pre-Biased US6-PLN
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | US-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Width | 1.25 mm |
| Type | PNP Epitaxial Silicon Transistor |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 120 |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Length | 2 mm |
| Maximum DC Collector Current | - 100 mA |
| RoHS | Y |
| Continuous Collector Current | - 100 mA |
| Subcategory | Transistors |
| Series | RN2911 |
| Height | 0.9 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 50 V |
| Pd - Power Dissipation | 200 mW |
| Typical Input Resistor | 10 kOhms |
| Brand | Toshiba |
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