RN2306,LF
- Manufacturer Toshiba
- Part Number RN2306,LF
- Description Bipolar Transistors - Pre-Biased USM TRANSISTOR Pd 100mW F 200Mhz
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SC-70 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Width | 1.25 mm |
| Type | PNP Epitaxial Silicon Transistor |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 80 |
| Unit Weight | 0.000988 oz |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Configuration | Single |
| Length | 2 mm |
| Maximum DC Collector Current | - 100 mA |
| RoHS | Y |
| Continuous Collector Current | - 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Series | RN2306 |
| Height | 0.9 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 50 V |
| Pd - Power Dissipation | 100 mW |
| Typical Resistor Ratio | 0.1 |
| Typical Input Resistor | 4.7 kOhms |
| Brand | Toshiba |
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