RN2117MFV(TPL3)
- Manufacturer Toshiba
- Part Number RN2117MFV(TPL3)
- Description Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 10Kohms x 4.7Kohms
- Category Bipolar Transistors - Pre-Biased
Specifications
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 15 V |
| Width | 0.5 mm |
| Type | PNP Epitaxial Silicon Transistor |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 30 |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 65 C to + 150 C |
| Length | 1.2 mm |
| RoHS | Y |
| Continuous Collector Current | - 100 mA |
| Subcategory | Transistors |
| Series | RN2117 |
| Height | 1.2 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 150 mW |
| Typical Resistor Ratio | 2.13 |
| Typical Input Resistor | 10 kOhms |
| Brand | Toshiba |
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