RN2110MFV,L3F
- Manufacturer Toshiba
- Part Number RN2110MFV,L3F
- Description Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SOT-723-3 |
| Min. Pack | 1 |
| Continuous Collector Current | - 100 mA |
| Product Category | Bipolar Transistors - Pre-Biased |
| Transistor Polarity | PNP |
| Subcategory | Transistors |
| Emitter- Base Voltage VEBO | - 5 V |
| Series | RN2110 |
| DC Collector/Base Gain hfe Min | 120 |
| Pd - Power Dissipation | 150 mW |
| Packaging | |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Brand | Toshiba |
| RoHS | Y |
| Typical Input Resistor | 4.7 kOhms |
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