RN2105,LF(CT
- Manufacturer Toshiba
- Part Number RN2105,LF(CT
- Description Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SSM-3 |
| Min. Pack | 1 |
| Packaging | |
| Product Category | Bipolar Transistors - Pre-Biased |
| Transistor Polarity | PNP |
| Subcategory | Transistors |
| Emitter- Base Voltage VEBO | - 5 V |
| Series | RN2105 |
| DC Collector/Base Gain hfe Min | 80 |
| Pd - Power Dissipation | 100 mW |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 50 V |
| Minimum Operating Temperature | - 55 C |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Maximum DC Collector Current | - 100 mA |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Brand | Toshiba |
| RoHS | Y |
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