RN1961FE(TE85L,F)
- Manufacturer Toshiba
- Part Number RN1961FE(TE85L,F)
- Description Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SOT-563 |
| Min. Pack | 1 |
| Continuous Collector Current | 100 mA |
| Product Category | Bipolar Transistors - Pre-Biased |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Emitter- Base Voltage VEBO | 10 V |
| Series | RN1961 |
| DC Collector/Base Gain hfe Min | 30 |
| Pd - Power Dissipation | 100 mW |
| Packaging | |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Unit Weight | 0.000106 oz |
| Mounting Style | SMD/SMT |
| Maximum DC Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Typical Resistor Ratio | 1 |
| Configuration | Dual |
| Brand | Toshiba |
| RoHS | Y |
| Typical Input Resistor | 4.7 kOhms |
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