RN1909,LF(CT
- Manufacturer Toshiba
- Part Number RN1909,LF(CT
- Description Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | US-6 |
| Min. Pack | 1 |
| Packaging | |
| Product Category | Bipolar Transistors - Pre-Biased |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Emitter- Base Voltage VEBO | 15 V |
| DC Collector/Base Gain hfe Min | 70 |
| Pd - Power Dissipation | 200 mW |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Maximum DC Collector Current | 100 mA |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Brand | Toshiba |
| RoHS | Y |
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