RN1906FE,LF(CT
- Manufacturer Toshiba
- Part Number RN1906FE,LF(CT
- Description Bipolar Transistors - BJT Bias Resistor Built- in Transistor, 2in1
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-563-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| Unit Weight | 0.000106 oz |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| Maximum DC Collector Current | 100 mA |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 100 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | RN1906 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 100 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 80 |
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