RN1706JE(TE85L,F)
- Manufacturer Toshiba
- Part Number RN1706JE(TE85L,F)
- Description Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | ESV-5 |
| Min. Pack | 1 |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 80 |
| Maximum Operating Frequency | 250 MHz |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 55 C to + 150 C |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Series | RN1706 |
| Packaging | |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 100 mW |
| Typical Resistor Ratio | 0.1 |
| Typical Input Resistor | 4.7 kOhms |
| Brand | Toshiba |
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