RN1313,LF
- Manufacturer Toshiba
- Part Number RN1313,LF
- Description Bipolar Transistors - Pre-Biased BRT 0.1A 50V
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 120 |
| Unit Weight | 0.000212 oz |
| Maximum Operating Frequency | 250 MHz |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Maximum Operating Temperature | + 125 C |
| Maximum DC Collector Current | 100 mA |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Configuration | Single |
| Subcategory | Transistors |
| Channel Mode | Enhancement |
| Series | RN1313 |
| Packaging | |
| Pd - Power Dissipation | 150 mW |
| Typical Input Resistor | 47 kOhms |
| Brand | Toshiba |
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