RN1130MFV(TPL3)
- Manufacturer Toshiba
- Part Number RN1130MFV(TPL3)
- Description Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | VESM-3 |
| Packaging | Reel |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 10 V |
| Width | 0.8 mm |
| Type | NPN Epitaxial Silicon Transistor |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 100 |
| DC Current Gain hFE Max | 100 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 65 C to + 150 C |
| Length | 1.2 mm |
| RoHS | N |
| Continuous Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Series | RN1130MFV |
| Height | 0.5 mm |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 150 mW |
| Typical Resistor Ratio | 1 |
| Typical Input Resistor | 100 kOhms |
| Brand | Toshiba |
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