RN1110,LF(CT
- Manufacturer Toshiba
- Part Number RN1110,LF(CT
- Description Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SC-75-3 |
| Min. Pack | 1 |
| Packaging | |
| Product Category | Bipolar Transistors - Pre-Biased |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Emitter- Base Voltage VEBO | 5 V |
| Series | RN1110 |
| DC Collector/Base Gain hfe Min | 120 |
| Pd - Power Dissipation | 100 mW |
| DC Current Gain hFE Max | 700 at 1 mA at 5 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Maximum DC Collector Current | 100 mA |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Brand | Toshiba |
| RoHS | Y |
Need pricing on RN1110,LF(CT?
Tell us your quantity and target price. We reply the same business day.