RN1109(T5L,F,T)
- Manufacturer Toshiba
- Part Number RN1109(T5L,F,T)
- Description Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SOT-416-3 |
| Min. Pack | 1 |
| Continuous Collector Current | 100 mA |
| Product Category | Bipolar Transistors - Pre-Biased |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Emitter- Base Voltage VEBO | 15 V |
| Series | RN1109 |
| DC Collector/Base Gain hfe Min | 70 |
| Pd - Power Dissipation | 100 mW |
| Packaging | |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Unit Weight | |
| Mounting Style | SMD/SMT |
| Maximum DC Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Typical Resistor Ratio | 2.14 |
| Configuration | Single |
| Brand | Toshiba |
| RoHS | Y |
| Typical Input Resistor | 47 kOhms |
Need pricing on RN1109(T5L,F,T)?
Tell us your quantity and target price. We reply the same business day.