RN1108MFV,L3F
- Manufacturer Toshiba
- Part Number RN1108MFV,L3F
- Description Bipolar Transistors - Pre-Biased TRANSISTOR NPN BRT, Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=50V, IC=0.1A, inSOT-723 (VESM) package
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | VESM-3 |
| Min. Pack | 1 |
| Packaging | |
| Product Category | Bipolar Transistors - Pre-Biased |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Emitter- Base Voltage VEBO | 7 V |
| Series | RN1108 |
| DC Collector/Base Gain hfe Min | 80 |
| Pd - Power Dissipation | 150 mW |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Maximum DC Collector Current | 100 mA |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Brand | Toshiba |
| RoHS | Y |
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