RN1106MFV(TPL3)
- Manufacturer Toshiba
- Part Number RN1106MFV(TPL3)
- Description Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms
- Category Bipolar Transistors - Pre-Biased
Specifications
| Packaging | Reel |
| Continuous Collector Current | 100 mA |
| Product Category | Bipolar Transistors - Pre-Biased |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Series | RN1106MFV |
| DC Collector/Base Gain hfe Min | 80 |
| DC Current Gain hFE Max | 80 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Mounting Style | SMD/SMT |
| Peak DC Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Pd - Power Dissipation | 150 mW |
| Typical Resistor Ratio | 0.1 |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Brand | Toshiba |
| RoHS | N |
| Typical Input Resistor | 4.7 kOhms |
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