RN1105MFV,L3F
- Manufacturer Toshiba
- Part Number RN1105MFV,L3F
- Description Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SOT-723-3 |
| Packaging | Reel |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 0.8 mm |
| Type | NPN Epitaxial Silicon Transistor |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 80 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Length | 1.2 mm |
| Maximum DC Collector Current | 100 mA |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Series | RN1105 |
| Height | 0.5 mm |
| Collector- Base Voltage VCBO | 50 V |
| Pd - Power Dissipation | 150 mW |
| Typical Resistor Ratio | 0.0468 |
| Typical Input Resistor | 2.2 kOhms |
| Brand | Toshiba |
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