RM80N60LD-T
- Manufacturer Rectron
- Part Number RM80N60LD-T
- Description MOSFET D-PAK MOSFET
- Category MOSFET
Specifications
| Package | TO-252-2 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 90 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 15 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Rectron |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 20 S |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 8.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 8.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 110 W |
| Rise Time | 7 ns |
| Technology | Si |
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