RM4N650T2
- Manufacturer Rectron
- Part Number RM4N650T2
- Description MOSFET TO-220 MOSFET
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 2,000 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 10 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 8 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Rectron |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 4 S |
| Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 1.2 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 48 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 46 W |
| Rise Time | 3 ns |
| Technology | Si |
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