RJK5015DPM-00#T1
- Manufacturer Renesas Electronics
- Part Number RJK5015DPM-00#T1
- Description MOSFET Power MOSFET
- Category MOSFET
Specifications
| Package | TO-3PFM-3 |
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 66 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 45 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Renesas Electronics |
| Unit Weight | 0.194007 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 25 A |
| Rds On - Drain-Source Resistance | 240 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | RJK5015 |
| Typical Turn-On Delay Time | 42 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 60 W |
| Rise Time | 59 ns |
| Technology | Si |
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