RJH65D27BDPQ-A0#T2
- Manufacturer Renesas Electronics
- Part Number RJH65D27BDPQ-A0#T2
- Description IGBT Transistors IGBT - 650V/50A/TO-247A
- Category IGBT Transistors
Specifications
| Package | TO-247A-3 |
| Packaging | Tube |
| Gate-Emitter Leakage Current | +/- 1 uA |
| Continuous Collector Current Ic Max | 100 A |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 100 A |
| Product Category | IGBT Transistors |
| Brand | Renesas Electronics |
| Unit Weight | 0.211644 oz |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 175 C |
| Maximum Gate Emitter Voltage | 30 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.3 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | RJH65D27BDPQ |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 375 W |
| Technology | Si |
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