RGTH80TS65DGC11
- Manufacturer ROHM Semiconductor
- Part Number RGTH80TS65DGC11
- Description IGBT Transistors 650V 40A IGBT Stop Trench
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 200 nA |
| Continuous Collector Current Ic Max | 70 A |
| Part # Aliases | RGTH80TS65D |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 70 A |
| Product Category | IGBT Transistors |
| Brand | ROHM Semiconductor |
| Unit Weight | 1.340411 oz |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 175 C |
| Operating Temperature Range | - 40 C to + 175 C |
| Maximum Gate Emitter Voltage | 30 V |
| RoHS | Y |
| Continuous Collector Current | 40 A |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Subcategory | IGBTs |
| Series | RGTH80TS65D |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 234 W |
| Technology | Si |
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