RGT00TS65DGC11
- Manufacturer ROHM Semiconductor
- Part Number RGT00TS65DGC11
- Description IGBT Transistors 650V 50A Trench IGBT Field Stop TO-247N
- Category IGBT Transistors
Specifications
| Package | TO-247N-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 1.65 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Gate-Emitter Leakage Current | 200 nA |
| Maximum Operating Temperature | + 175 C |
| Brand | ROHM Semiconductor |
| Pd - Power Dissipation | 277 W |
| Continuous Collector Current at 25 C | 85 A |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Unit Weight | 0.211644 oz |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 30 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 40 C |
| Part # Aliases | RGT00TS65D |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
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