RF4C050APTR
- Manufacturer ROHM Semiconductor
- Part Number RF4C050APTR
- Description MOSFET Pch -20V -10A Middle Power MOSFET
- Category MOSFET
Specifications
| Package | DFN2020-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 300 mV |
| Width | 2.1 mm |
| Qg - Gate Charge | 55 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | RF4C050AP |
| Type | Power MOSFET |
| Fall Time | 160 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.196723 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current | 10 A |
| Length | 2.1 mm |
| Rds On - Drain-Source Resistance | 65 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 580 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | RF4C050AP |
| Height | 0.65 mm |
| Packaging | |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 16 ns |
| Technology | Si |
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