RCD051N20TL
- Manufacturer ROHM Semiconductor
- Part Number RCD051N20TL
- Description MOSFET 10V Drive Nch Power MOSFET
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3.25 V |
| Qg - Gate Charge | 8.3 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | RCD051N20 |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 1.3 S |
| Id - Continuous Drain Current | 5 A |
| Rds On - Drain-Source Resistance | 540 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 18 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | RCD051N20 |
| Typical Turn-On Delay Time | 13 ns |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | 29 W |
| Rise Time | 15 ns |
| Technology | Si |
Need pricing on RCD051N20TL?
Tell us your quantity and target price. We reply the same business day.