R6030ENZ1C9
- Manufacturer ROHM Semiconductor
- Part Number R6030ENZ1C9
- Description MOSFET 10V Drive Nch MOSFET
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 85 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | |
| Fall Time | 60 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current | 30 A |
| Rds On - Drain-Source Resistance | 115 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 190 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 40 ns |
| Pd - Power Dissipation | 120 W |
| Rise Time | 55 ns |
| Technology | Si |
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