QS8J11TCR
- Manufacturer ROHM Semiconductor
- Part Number QS8J11TCR
- Description MOSFET Dual P-Channel MOSFET Transistor
- Category MOSFET
Specifications
| Package | TSMT-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 22 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | QS8J11 |
| Fall Time | 60 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 P-Channel |
| Id - Continuous Drain Current | 3.5 A |
| Rds On - Drain-Source Resistance | 31 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 170 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | QS8J11 |
| Packaging | |
| Typical Turn-On Delay Time | 15 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.5 W |
| Rise Time | 30 ns |
| Technology | Si |
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